Liquid-phase epitaxy of GaAs by temperature difference method to realize wide lateral growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Epitaxial Lateral Overgrowth of GaAs by LPE
2. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
3. InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth
4. Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy
5. Spatially resolved photoluminescence of laterally overgrown InP on InP-coated Si substrates
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1. Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping;Journal of Crystal Growth;2016-10
2. Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization;Journal of Crystal Growth;2016-04
3. Abnormal growth in super-low supersaturation microchannel epitaxy of (001) GaAs and its improvement;Japanese Journal of Applied Physics;2015-01-13
4. Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy;Journal of Crystal Growth;2013-01
5. Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate;Journal of Crystal Growth;2010-02
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