Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy-Reference-Cited by-同舟云学术

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Selective epitaxial growth of GaAs by current controlled liquid phase epitaxy

Published:2013-01 Issue: Volume:362 Page:238-242
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mouleeswaran D.,Koyama T.,Tanaka A.,Hayakawa Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. X-ray detectors for digital radiography

2. A new GaAs material for X-ray imaging

3. F. Semendy, S. Singh, M. Litz, P. Wijewarnasuriya, K. Blaine, N. Dhar, Solid-State Electronics. 54 (2010) 1–3.

4. On the development of portable X-ray CT mini-system using semi-insulating GaAs radiation imaging detectors

5. Performance of semi-insulating GaAs-based radiation detectors: Role of key physical parameters of base materials

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Crystal Growth: Methods and Materials;Springer Handbook of Electronic and Photonic Materials;2017

2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015

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