Optimization of growth condition for wide dislocation-free GaAs on Si substrate by microchannel epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates
2. Influences of Dark Line Defects on Characteristics of AlGaAs/GaAs Quantum Well Lasers Grown on Si Substrates
3. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
4. Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
5. Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate
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