Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
2. Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
3. H. Mori, Y. Itoh, M. Tachikawa and M. Sugo, in: Extended Abstracts 1992 Autumn Meeting of the Japan Society of Applied Physics and Related Societies, No. 1, p. 304.
4. Laser-Diode-Quality InP/Si Grown by Hydride Vapor Phase Epitaxy
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