Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping-Reference-Cited by-同舟云学术

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Experimental study of growth mechanism of GaAs microchannel epitaxy – Study of pinning effect of Si-doping

Published:2016-10 Issue: Volume:452 Page:240-243
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mizuno Y.,Tomita M.,Takakura H.,Iwakawa M.,Kambayashi D.,Maruyama T.,Naritsuka S.

Funder

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Epitaxial Lateral Overgrowth of GaAs by LPE

2. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate

3. Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate

4. Defect‐free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy

5. Model for defect-free epitaxial lateral overgrowth of Si over SiO2 by liquid phase epitaxy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mesa orientation dependence of lateral growth of GaN microchannel epitaxy by electric liquid-phase epitaxy using a mesa-shaped substrate;Journal of Crystal Growth;2018-08

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