Model for defect-free epitaxial lateral overgrowth of Si over SiO2 by liquid phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Silicon Layers Grown on Patterned Substrates by Liquid Phase Epitaxy
2. Thin Film Growth Techniques for Low-dimensional Structures;Bauser,1987
3. Defect‐free epitaxial lateral overgrowth of oxidized (111) Si by liquid phase epitaxy
4. Epitaxial Lateral Overgrowth of Si by LPE with Sn Solution and Its Orientation Dependence
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