Effect of dislocation density on microchannel epitaxy of GaAs on GaAs/Si substrate
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. T. Nishinaga, H.J. Scheel, in: H. Hayakawa, Y. Enomoto (Eds.), Advancesin Superconductivity VIII, Springer, Tokyo, p. 33.
2. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
3. Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate
4. Liquid-phase epitaxial lateral overgrowth of GaAs on 0.3 °-misoriented epitaxial Si substrates
5. Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate
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