Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas-Reference-Cited by-同舟云学术

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Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas

Published:2017-04 Issue: Volume:463 Page:128-133
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Margetis J.,Mosleh A.,Al-Kabi S.,Ghetmiri S.A.,Du W.,Dou W.,Benamara M.,Li B.,Mortazavi M.,Naseem H.A.,Yu S.-Q.,Tolle J.

Funder

NSF career

AFOSR

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference32 articles.

1. Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors;Vincent;Microelectron. Eng.,2011

2. 7-nm FinFET CMOS design enabled by stress engineering using Si, Ge, and Sn;Gupta;Electron Dev. IEEE Trans.,2014

3. Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction;Wang;Jpn. J. Appl. Phys.,2016

4. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon;Mathews;Appl. Phys. Lett.,2010

5. New classes of Si-based photonic materials and device architectures via designer molecular routes;Kouvetakis;J. Mater. Chem.,2007

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1. Advances in GeSn alloys for MIR applications;Photonics and Nanostructures - Fundamentals and Applications;2024-02

2. Effective strain relaxation of GeSn single crystal with Sn content of 16.5% on Ge grown by high-temperature sputtering;Applied Surface Science;2023-06

3. Isothermal Heteroepitaxy of Ge_1–xSn_x Structures for Electronic and Photonic Applications;ACS Applied Electronic Materials;2023-04-03

4. Investigation of the cap layer for improved GeSn multiple quantum well laser performance;Optics Letters;2023-03-21

5. Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates;Japanese Journal of Applied Physics;2023-03-01

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