Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications-Reference-Cited by-同舟云学术

Isothermal Heteroepitaxy of Ge_1–xSn_x Structures for Electronic and Photonic Applications

Published:2023-04-03 Issue:4 Volume:5 Page:2268-2275
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Concepción Omar¹^ORCID,Søgaard Nicolaj B.²^ORCID,Bae Jin-Hee¹,Yamamoto Yuji³,Tiedemann Andreas T.¹,Ikonic Zoran⁴,Capellini Giovanni³⁵,Zhao Qing-Tai¹^ORCID,Grützmacher Detlev¹,Buca Dan¹

Affiliation:

1. Peter Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany

2. Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark

3. IHP - Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

4. Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

5. Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi 446, 00146 Roma, Italy

Funder

European Commission

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c00112

Reference48 articles.

1. Lasing in direct-bandgap GeSn alloy grown on Si

2. Room temperature optically pumped GeSn microdisk lasers

3. Electrically injected GeSn lasers with peak wavelength up to 2.7 μm

4. Epitaxial GeSn/Ge Vertical Nanowires for p-Type Field-Effect Transistors with Enhanced Performance

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