Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates

Abstract

Abstract We examined the effects of the laser scan speed and power on the Sn fraction and crystallinity of GeSn wires of 1 μm width and 1 mm length fabricated by laser-induced local liquid phase crystallization on quartz substrates. The Sn fraction increased from 1% to 3.5% with an increasing scan speed from 5 to 100 μm s−1, corresponding to a luminescence wavelength of 1770–2070 nm. This result can be interpreted as the scan speed dependence of the non-equilibrium degree during crystal growth. The increase in the laser power reduced the Sn fraction and caused a blue shift in the luminescence wavelength. We discuss these phenomena based on the growth kinetics of zone melting.