GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
2. Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
3. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si
4. Growth and structural characteristics of GaN∕AlN/nanothick γ-Al[sub 2]O[sub 3]∕Si (111)
5. Properties of Ga[sub 2]O[sub 3](Gd[sub 2]O[sub 3])/GaN metal–insulator–semiconductor diodes
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1. Fabrication and Evaluation of N-Channel GaN Metal–Oxide–Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods;Materials;2020-02-18
2. Characterization of GaN/p-Si solar cell prepared by simple technique;Optik;2015-11
3. Characterization of ultrathin Al 2 O 3 gate oxide deposited by RF-magnetron sputtering on gallium nitride epilayer on sapphire substrate;Materials Chemistry and Physics;2014-12
4. A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3;ECS Journal of Solid State Science and Technology;2014
5. Current Conduction Mechanisms in RF-Magnetron Sputtered Y2O3 Gate on GaN Under Different Post-Deposition Annealing Ambient;Science of Advanced Materials;2013-12-01
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