Characterization of ultrathin Al 2 O 3 gate oxide deposited by RF-magnetron sputtering on gallium nitride epilayer on sapphire substrate
Author:
Funder
Universiti Sains Malaysia, The USM RU-PRGS
The Universiti Sains Malaysia Vice Chancellor's Award
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
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1. Interface properties of thermally oxidized n-GaN metal–oxide–semiconductor capacitors
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3. FORTHCOMING GALLIUM NITRIDE BASED POWER DEVICES IN PROMPTING THE DEVELOPMENT OF HIGH POWER APPLICATIONS
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