Growth and structural characteristics of GaN∕AlN/nanothick γ-Al[sub 2]O[sub 3]∕Si (111)-Reference-Cited by-同舟云学术

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Growth and structural characteristics of GaN∕AlN/nanothick γ-Al[sub 2]O[sub 3]∕Si (111)

Published:2008 Issue:3 Volume:26 Page:1064
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Lee W. C.,Lee Y. J.,Tung L. T.,Wu S. Y.,Lee C. H.,Hong M.,Ng H. M.,Kwo J.,Hsu C. H.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improving Epitaxial Growth of γ‐Al₂O₃ Films via Sc₂O₃/Y₂O₃ Oxide Buffers;physica status solidi (a);2024-05-27

2. Interfacial Area between Hetero-Epitaxial γ-Al2 O3 and Silicon;Advanced Materials Interfaces;2017-07-13

3. Hetero-epitaxial Γ-Al2O3 on Si (100) substrate by sputtering;Materials Letters;2015-02

4. The cohesive crack and buckle delamination resistances of indium tin oxide (ITO) films on polymeric substrates with ductile metal interlayers;Surface and Coatings Technology;2010-05

5. GaN metal-oxide-semiconductor diodes with molecular beam epitaxy-Al2O3 as a template followed by atomic layer deposition growth;Journal of Crystal Growth;2009-03

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