Interfacial Area between Hetero-Epitaxial γ-Al2 O3 and Silicon
Author:
Affiliation:
1. School of Photovoltaic and Renewable Energy Engineering; UNSW Australia; Sydney 2052 Australia
2. School of Materials Science and Engineering; UNSW Australia; Sydney 2052 Australia
Funder
Australian Renewable Energy Agency
NSW Government Science Leverage Fund
Publisher
Wiley
Subject
Mechanical Engineering,Mechanics of Materials
Reference33 articles.
1. Alternative dielectrics to silicon dioxide for memory and logic devices
2. Epitaxial integration of perovskite-based multifunctional oxides on silicon
3. Growth and structural characteristics of GaN∕AlN/nanothick γ-Al[sub 2]O[sub 3]∕Si (111)
4. Efficient spin injection through a crystalline AlOx tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs
5. Heteroepitaxial film crystal silicon on Al2O3: new route to inexpensive crystal silicon photovoltaics
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fundamental Origin of Si Surface Defects Caused by Laser Irradiation and Prevention of Suboxide Formation through High Density Ultrathin SiO2;Applied Surface Science;2024-07
2. Improving Epitaxial Growth of γ‐Al2O3 Films via Sc2O3/Y2O3 Oxide Buffers;physica status solidi (a);2024-05-27
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