A Comparison of N-Polar () GaN Surface Preparations for the Atomic Layer Deposition of Al2O3
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference36 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
3. AlGaN/GaN MIS-HFETs with f/sub T/ of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers
4. High-power AlGaN/GaN HEMTs for Ka-band applications
5. N-polar n+ GaN cap development for low ohmic contact resistance to inverted HEMTs
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A discussion on various experimental methods of impact ionization coefficient measurement in GaN;AIP Advances;2022-03-01
2. On the characteristics of N-polar GaN Schottky barrier contacts with LPCVD SiN interlayers;Applied Physics Letters;2021-03-22
3. Atomic Layer Deposition of AlN Thin Films on GaN and Electrical Properties in AlN/GaN Heterojunction Diodes;Transactions on Electrical and Electronic Materials;2020-09-14
4. Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN;Journal of Applied Physics;2020-08-14
5. Band alignments of sputtered dielectrics on GaN;Journal of Physics D: Applied Physics;2019-12-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3