Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films
2. Misfit dislocation formation in lattice-mismatched III - V heterostructures grown by metal - organic vapour phase epitaxy
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4. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers
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