Low misfit systems as tools for understanding dislocation relaxation mechanisms in semiconducting heteroepitaxial films
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/14/i=48/a=376/pdf
Reference33 articles.
1. One-dimensional dislocations. I. Static theory
2. One-dimensional dislocations. II. Misfitting monolayers and oriented overgrowth
3. One-dimensional dislocations - III. Influence of the second harmonic term in the potential representation, on the properties of the model
4. Defects in epitaxial multilayers I. Misfit dislocations
5. Defects in epitaxial multilayers
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