Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate-Reference-Cited by-同舟云学术

Molecular beam epitaxy growth of bulk GaNAsSb on Ge/graded-SiGe/Si substrate

Published:2009-03 Issue:7 Volume:311 Page:1754-1757
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ng Tien Khee,Yoon Soon Fatt,Tan Kian Hua,Chen Kah Pin,Tanoto Hendrix,Lew Kim Luong,Wicaksono Satrio,Loke Wan Khai,Dohrman Carl,Fitzgerald Eugene A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates

2. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing

3. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

4. Growth of GaAs on vicinal Ge surface using low-temperature migration-enhanced epitaxy

5. D.J. Friedman, S. R. Kurtz, J.F. Geisz, Analysis of the GaInP/GaAs/1-eV/Ge cell and related structures for terrestrial concentrator application, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, (19–24 May 2002), pp. 856–859.

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1. Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers;AIP Advances;2024-03-01

2. Tomographic Mapping Analysis in the Depth Direction of High-Ge-Content SiGe Layers with Compositionally Graded Buffers Using Nanobeam X-ray Diffraction;ACS Applied Materials & Interfaces;2017-04-10

3. Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate;Applied Physics Letters;2014-03-10

4. Growth of AlPN by solid source molecular beam epitaxy;physica status solidi (c);2010-12-20