Study of a 1 eV GaNAsSb photovoltaic cell grown on a silicon substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4867082
Reference20 articles.
1. Projected performance of three- and four-junction devices using GaAs and GaInP
2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
3. Study on the device structure of GaInNAs(Sb) based solar cells for use in 4-junction tandem solar cells
4. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
5. Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy
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1. 1 eV GaAsSbN–based solar cells for efficient multi-junction design: Enhanced solar cell performance upon annealing;Solar Energy;2021-06
2. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states;Solar Energy Materials and Solar Cells;2019-09
3. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications;Applied Surface Science;2018-06
4. Type-II GaAsSb/GaAsN superlattice solar cells;Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VII;2018-02-16
5. Strain-balanced type-II superlattices for efficient multi-junction solar cells;Scientific Reports;2017-06-21
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