Mechanisms of ammonia—MBE growth of GaN on SiC for transport devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
2. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications
3. Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
4. MBE growth of ALGaN/GaN HEMTS on resistive Si(111) substrate with RF small signal and power performances
5. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Morphology of GaN Monolayers Grown on AlN Surface During Ammonia Flow Cycling;2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM);2022-06-30
2. Abnormal variation of the growth rate under high NH3injected regime in the growth of GaN by NH3-source MBE;Japanese Journal of Applied Physics;2017-02-10
3. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111);Journal of Applied Physics;2015-06-28
4. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy;Journal of Applied Physics;2015-01-14
5. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy;Journal of Applied Physics;2010-05-15
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