Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Crystal growth of SiC by step-controlled epitaxy
3. Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H‐SiC{0001} vicinal surfaces
4. Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
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1. Characterization and formation mechanism of short step-bunching defects on 4H-SiC thick homoepitaxial films;Journal of Crystal Growth;2024-05
2. Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis;Journal of Applied Physics;2024-03-01
3. Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor;2024
4. Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor;2024
5. Defect Inspection Techniques in SiC;Nanoscale Research Letters;2022-03-04
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