Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE-Reference-Cited by-同舟云学术

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Effect of AlN interlayers in the structure of GaN-on-Si grown by plasma-assisted MBE

Published:2009-03 Issue:7 Volume:311 Page:2010-2015
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Adikimenakis A.,Sahonta S.-L.,Dimitrakopulos G.P.,Domagala J.,Kehagias Th.,Komninou Ph.,Iliopoulos E.,Georgakilas A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy

2. Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

3. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

4. The origin of stress reduction by low-temperature AlN interlayers

5. GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

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1. Tackling residual tensile stress in AlN-on-Si nucleation layers via the controlled Si(111) surface nitridation;Surfaces and Interfaces;2024-08

2. The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs;Photonics;2023-09-29

3. Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy;Solid State Communications;2020-01

4. Thermodynamics of inversion-domain boundaries in aluminum nitride: Interplay between interface energy and electric dipole potential energy;Journal of Applied Physics;2018-05-07

5. Self-annihilation of inversion domains by high energy defects in III-Nitrides;Applied Physics Letters;2014-04-07

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