Self-annihilation of inversion domains by high energy defects in III-Nitrides
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4871302
Reference31 articles.
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4. Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy
5. Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
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1. Polarity Control by Inversion Domain Suppression in N-Polar III-Nitride Heterostructures;Crystal Growth & Design;2023-01-19
2. On the polarity determination and polarity inversion in nitrogen-polar group III-nitride layers grown on SiC;Journal of Applied Physics;2022-02-07
3. Structural, electrical, and optical properties of annealed InN films grown on sapphire and silicon substrates;Thin Solid Films;2019-02
4. Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps;Journal of Applied Crystallography;2017-03-22
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