Elimination of surface band bending on N-polar InN with thin GaN capping-Reference-Cited by-同舟云学术

Elimination of surface band bending on N-polar InN with thin GaN capping

Published:2015-11-09 Issue:19 Volume:107 Page:191605
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kuzmík J.¹,Haščík Š.¹,Kučera M.¹^ORCID,Kúdela R.¹,Dobročka E.¹,Adikimenakis A.²,Mičušík M.³,Gregor M.⁴,Plecenik A.⁴,Georgakilas A.⁵

Affiliation:

1. Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravska cesta 9, 841 04 Bratislava, Slovakia

2. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Crete, Greece

3. Polymer Institute, Slovak Academy of Sciences, Dúbravska cesta 9, 845 41 Bratislava, Slovakia

4. Faculty of Mathematics, Physics and Informatics, Comenius University in Bratislava, Mlynská dolina, 842 48 Bratislava, Slovakia

5. Microelectronics Research Group (MRG), IESL, FORTH, P.O. Box 1385, 71110 Heraklion, Greece and Department of Physics, University of Crete, 71203 Heraklion, Greece

Funder

CENTE I

ERDF

ESPA ARISTEIA

GREECE-SLOVAKIA COLLABORATION

Vedecká Grantová Agentúra MŠVVaŠ SR a SAV (VEGA)

Agentúra na Podporu Výskumu a Vývoja (APVV)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4935615

Reference25 articles.

1. Transient electron transport in wurtzite GaN, InN, and AlN

2. Proposal of High-Electron Mobility Transistors With Strained InN Channel

3. Proposal of normally-off InN-channel high-electron mobility transistors

4. Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistors

5. Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy

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