Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD-Reference-Cited by-同舟云学术

Optical study of inverted interface in InP/InAlAs/InP structures grown by MOCVD

Published:2000-05 Issue: Volume:51-52 Page:299-308
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Borgi K,Hjiri M,Hassen F,Maaref H,Souliere V,Monteil Y

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Photoluminescence and band offsets of AlInAs/InP

2. How does the chemical nature of the interface modify the band offset?

3. Optical transitions and chemistry at the In0.52Al0.48As/InP interface

4. InAlAs/InP heterostructures: Influence of a thin InAs layer at the interface

5. Photoluminescence study of the interface in type II InAlAs–InP heterostructures

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative optical studies of InAlAs/InP quantum wells grown by MOCVD on (311)A and (311)B InP planes;Journal of Materials Science: Materials in Electronics;2020-05-29

2. Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures;Japanese Journal of Applied Physics;2020-01-24

3. Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE;Journal of Materials Science: Materials in Electronics;2017-08-23

4. Optical study of direct interface in InP/InAlAs/InP double heterostructures grown by MOCVD;Physica E: Low-dimensional Systems and Nanostructures;2003-04

5. Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates;Journal of Applied Physics;2002-06