Salicides: materials, scaling and manufacturability issues for future integrated circuits (invited)-Reference-Cited by-同舟云学术

Salicides: materials, scaling and manufacturability issues for future integrated circuits (invited)

Published:2000-01 Issue:1-4 Volume:50 Page:87-101
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Kittl J.A,Shiau W.T,Hong Q.Z,Miles D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Self-aligned Ti and Co silicides for high performance sub-0.18 μm CMOS technologies

2. Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

3. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/

4. Kinetics and nucleation model of the C49 to C54 phase transformation in TiSi2 thin films on deep‐sub‐micron n+ type polycrystalline silicon lines

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