Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation-Reference-Cited by-同舟云学术

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Metallic Schottky barrier source/drain nanowire transistors using low-temperature microwave annealed nickel, ytterbium, and titanium silicidation

Published:2017-11 Issue: Volume:70 Page:272-278
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Shih Chun-Hsing,Huang Ming-Kun,Tsai Jr-Jie,Chen Yu-Hsuan,Wu Wen-Fa

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference26 articles.

1. The physics and chemistry of the Schottky barrier height;Tung;Appl. Phys. Rev.,2014

2. Overview and status of metal S/D Schottky barrier MOSFET technology;Larson;IEEE Trans. Electron Devices,2006

3. Performance assessment of III–V channel ultra-thin-body Schottky-barrier MOSFETs;Lee;IEEE Electron Device Lett.,2014

4. Simulation of Phosphorene field-effect transistor at the scaling limit;Cao;IEEE Trans. Electron Devices,2015

5. ITRS, International Technology Roadmap for Semiconductors, edition 2013.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing;Nanomaterials;2022-08-30

2. Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications;Crystals;2020-11-13

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