Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2-Reference-Cited by-同舟云学术

Advanced salicides for 0.10 μm CMOS: Co salicide processes with low diode leakage and Ti salicide processes with direct formation of low resistivity C54 TiSi 2

Published:1998-11 Issue:1-2 Volume:332 Page:404-411
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Kittl J.A.,Hong Q.Z.,Yang H.,Yu N.,Samavedam S.B.,Gribelyuk M.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. J.A. Kittl, Q.Z. Hong, Thin Solid Films (1998) in press.

2. J.A. Kittl, Q.Z. Hong, Proceedings of the 4th International Workshop on Stress Induced Phenomena in Metallization, AIP Conference Proceedings 418, University of Tokyo, Japan, 1997, p. 439.

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