SiON films deposited on Si(111) substrates—new promising materials for nonlinear optics-Reference-Cited by-同舟云学术

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SiON films deposited on Si(111) substrates—new promising materials for nonlinear optics

Published:1999-09 Issue:2 Volume:64 Page:88-98
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Plucinski K.J.,Makowska-Janusik M.,Mefleh A.,Kityk I.V.,Yushanin V.G.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference23 articles.

1. Silicon nitride and oxynitride films

2. Making silicon nitride film a viable gate dielectric

3. Characterization of LPCVD and PECVD silicon oxynitride films

4. F.H.P.M. Habraken, IPCVD Silicon Nitride and Oxinitride Films, Springer Verlag, Berlin–Heidelberg, 1991, p. 234.

5. Controlled index of refraction silicon oxynitride films characterized by variable angle spectroscopic ellipsometry

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