High pressure fabrication and processing of GaN:Mg-Reference-Cited by-同舟云学术

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High pressure fabrication and processing of GaN:Mg

Published:1999-05 Issue:1-3 Volume:59 Page:1-5
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Suski T,Jun J,Leszczynski M,Teisseyre H,Grzegory I,Porowski S,Dollinger G,Saarinen K,Laine T,Nissilä J,Burkhard W,Kriegseis W,Meyer B.K

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. The Blue Laser Diodes;Nakamura,1997

2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz

3. Very high breakdown voltage and large transconductance realized on GaN heterojunction field effect transistors

4. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

5. High Resistivity GaN Single Crystalline Substrates

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Vertical power devices enabled by bulk GaN substrates;Gallium Nitride Materials and Devices XIV;2019-03-01

2. GaN Power Devices – Current Status and Future Directions;The Electrochemical Society Interface;2018

3. Low temperature homoepitaxy of GaN structures by Vapor Liquid Solid transport;Journal of Crystal Growth;2017-06

4. Highly Mg-doped GaN dots and films grown by VLS transport at low temperature;physica status solidi (a);2016-09-26

5. Diffusion of oxygen in bulk GaN crystals at high temperature and at high pressure;Journal of Crystal Growth;2016-09

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