High Resistivity GaN Single Crystalline Substrates
Author:
Affiliation:
1. High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland
2. Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Reality or fantasy—Perovskite semiconductor laser diodes;EcoMat;2021-01-27
2. Structural defects in bulk GaN;Journal of Crystal Growth;2014-10
3. Extended defects in bulk GaN and III-nitrides grown on this substrate;Journal of Crystal Growth;2010-09
4. GaN Bulk Substrates Grown under Pressure from Solution in Gallium;Bulk Crystal Growth of Electronic, Optical & Optoelectronic Materials;2010-07-14
5. Growth of AlN, GaN and InN from the solution;International Journal of Materials and Product Technology;2005
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