Effect of the starting surface on the morphology of MBE-grown GaAs
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference7 articles.
1. Studies of large scale unstable growth formed during GaAs(001) homoepitaxy
2. Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy
3. Real-time laser-light scattering studies of surface topography development during GaAs MBE growth
4. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
5. Real-time monitoring of InAs/GaAs quantum dot growth using ultraviolet light scattering
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2. Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy;Thin Solid Films;2008-04
3. Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source;SPIE Proceedings;2008-03-03
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