Atomistic basis for continuum growth equation: Description of morphological evolution of GaAs during molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference86 articles.
1. The growth of crystals and the equilibrium structure of their surfaces
2. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
3. Semiconductor substrate cleaning and surface morphology in molecular beam epitaxy
4. Atomically Flat GaAs(001) Surfaces Obtained by High-Temperature Treatment with Atomic Hydrogen Irradiation
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