Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Surface morphology of GaAs(001) grown by solid- and gas-source molecular beam epitaxy

Published:1996-02 Issue:1-3 Volume:346 Page:136-144
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Van Nostrand Joseph E,Chey S.Jay,Cahill David G,Botchkarev A.E,Morkoç H

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference47 articles.

1. The Technology and Physics of Molecular Beam Epitaxy;Parker,1985

2. Delta doping in silicon

3. Critical island size for layer-by-layer growth

4. Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces;Larsen,1988

5. A review of the geometrical fundamentals of reflection high‐energy electron diffraction with application to silicon surfaces

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1. Energetics and heterodiffusion of Cu on Ag(110) stepped surfaces;Surface and Interface Analysis;2015-08-11

2. Anisotropic unstable and stable growth of homoepitaxial (100) InP films;Surface Science;2002-08

3. Effect of the starting surface on the morphology of MBE-grown GaAs;Materials Science and Engineering: B;2000-06

4. Influence of rough substrates on the morphology evolution of epitaxial films;Physical Review B;2000-05-15

5. Smoothing of textured GaAs surfaces during molecular beam epitaxy growth;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

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