Ultrafast growth of InGaP solar cells via hydride vapor phase epitaxy
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://iopscience.iop.org/article/10.7567/1882-0786/ab0aa5/pdf
Reference31 articles.
1. Four-Junction Wafer-Bonded Concentrator Solar Cells
2. Wafer bonded four-junction GaInP/GaAs//GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency
3. Development of InGaP/GaAs/InGaAs inverted triple junction concentrator solar cells
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1. Review on ultrahigh growth rate GaAs solar cells by metalorganic vapor-phase epitaxy;Journal of Vacuum Science & Technology A;2024-02-21
2. Performance of Hydride Vapor Phase Epitaxy‐Grown GaInP Photovoltaics with Double‐Sided Al‐Containing Passivation Layers Under Air Mass 1.5 Global Solar Irradiation and Low‐Intensity Indoor Light Irradiation;Solar RRL;2024-01-23
3. 1.5 eV GaInAsP Solar Cells Grown via Hydride Vapor‐Phase Epitaxy for Low‐Cost GaInP/GaInAsP//Si Triple‐Junction Structures;Advanced Energy and Sustainability Research;2023-03
4. Mechanical stacked GaAs//CuIn 1− y Ga y Se 2 three‐junction solar cells with 30% efficiency via an improved bonding interface and area current‐matching technique;Progress in Photovoltaics: Research and Applications;2022-07-21
5. InGaP/GaAs dual‐junction solar cells with AlInGaP passivation layer grown by hydride vapor phase epitaxy;Progress in Photovoltaics: Research and Applications;2021-07-22
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