Optical characterization of III-nitrides-Reference-Cited by-同舟云学术

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Optical characterization of III-nitrides

Published:2002-05 Issue:1-3 Volume:93 Page:112-122
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Monemar B,Paskov P.P,Paskova T,Bergman J.P,Pozina G,Chen W.M,Hai P.N,Buyanova I.A,Amano H,Akasaki I

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference66 articles.

1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

3. GaN as Seen by the Industry

4. Nitride Semiconductors and Devices;Morkoc,1999

5. Group III-nitride based hetero and quantum structures

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1. Role of Temperature in Arsenic-Induced Antisurfactant Growth of GaN Microrods;ACS Omega;2022-07-05

2. Point Defects in GaN;Semiconductors and Semimetals;2022

3. Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport;Physical Review B;2020-02-18

4. Emission Properties of GaN Planar Hexagonal Microcavities;physica status solidi (a);2019-12-30

5. Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN;Physical Review B;2018-05-17

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