Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport
Author:
Funder
Energimyndigheten
U.S. Department of Energy
Simons Foundation
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.101.075305/fulltext
Reference26 articles.
1. Carrier distribution in (0001)InGaN∕GaN multiple quantum well light-emitting diodes
2. Interwell carrier transport in InGaN/(In)GaN multiple quantum wells
3. Carrier Transport in InGaN MQWs of Aquamarine- and Green-Laser Diodes
4. Pivotal role of ballistic and quasi-ballistic electrons on LED efficiency
5. Field-dependent carrier decay dynamics in strainedInxGa1−xN/GaNquantum wells
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1. Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs;Applied Physics Letters;2023-11-13
2. Plasmonic Light Scattering via Au Nanoparticles for Extended Photo Absorption in InGaN/GaN Multiquantum Wells for Unbiased Stable Solar-Driven Water Splitting;ACS Applied Nano Materials;2023-01-09
3. Change of radiative and low-frequency noise characteristics of UV LEDs based on InGaN/GaN quantum wells at liquid nitrogen temperature;ST PETER POLY U J-PH;2023
4. Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs;Journal of Luminescence;2021-06
5. Impact of random alloy fluctuations on inter-well transport in InGaN/GaN multi-quantum well systems: an atomistic non-equilibrium Green’s function study;Journal of Physics: Condensed Matter;2020-10-29
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