Emission Properties of GaN Planar Hexagonal Microcavities-Reference-Cited by-同舟云学术

Emission Properties of GaN Planar Hexagonal Microcavities

Published:2019-12-30 Issue:14 Volume:217 Page:1900894
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Pozina Galia¹^ORCID,Hemmingsson Carl¹,Belonovskii Alexei V.²,Levitskii Iaroslav V.³⁴,Mitrofanov Maxim I.³⁴,Girshova Elizaveta I.²³⁴,Ivanov Konstantin A.³,Rodin Sergey N.⁴,Morozov Konstantin M.²³,Evtikhiev Vadim P.⁴,Kaliteevski Mikhail A.²³⁴

Affiliation:

1. Department of Physics, Chemistry and Biology (IFM)Linköping University S-581 83 Linköping Sweden

2. Laboratory of NanoelectronicsSt-Petersburg Academic University Khlopina 8/3 194021 St. Petersburg Russian Federation

3. School of PhotonicsITMO University Kronverkskiy pr. 49 197101 St. Petersburg Russian Federation

4. Centre of Nanoheterostructure PhysicsIoffe Institute Politekhnicheskaya 26 194021 St. Petersburg Russian Federation

Funder

Russian Science Foundation

Vetenskapsrådet

Energimyndigheten

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900894

Reference24 articles.

1. GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors

2. Gallium nitride nanostructures for light-emitting diode applications

3. Semiconductor Nanowire Fabrication by Bottom-Up and Top-Down Paradigms

4. Bottom-up assembly of large-area nanowire resonator arrays

5. Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

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