Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Published:2018-05-08 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Pozina Galia^ORCID,Gubaydullin Azat R.,Mitrofanov Maxim I.,Kaliteevski Mikhail A.,Levitskii Iaroslav V.,Voznyuk Gleb V.,Tatarinov Evgeniy E.,Evtikhiev Vadim P.,Rodin Sergey N.,Kaliteevskiy Vasily N.,Chechurin Leonid S.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-25647-7.pdf

Reference47 articles.

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3. Li, Y. et al. Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. Nano Lett. 6, 1468–1473 (2006).

4. Yu, J. W. et al. Short channel effects on gallium nitride/gallium oxide nanowire transistors. Appl. Phys. Lett. 101, 183501 (2012).

5. Li, C. et al. Nonpolar InGaN/GaN core–shell single nanowire lasers. Nano Lett. 17, 1049–1055 (2017).

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