Surface smoothing of SiGe strain-relaxed buffer layers by chemical mechanical polishing
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
2. Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures
3. Ultrahigh Electron Mobilities in Si1-xGex/Si/Si1-xGexHeterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
4. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
5. Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
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1. Studies on Electrochemical Characteristics of SiGe in Application to Chemical Mechanical Polishing;ECS Journal of Solid State Science and Technology;2018
2. Combined wet and dry cleaning of SiGe(001);Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-07
3. Strain engineering of silicon–germanium (SiGe) virtual substrates;Silicon–Germanium (SiGe) Nanostructures;2011
4. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010
5. DC and 1/f noise characteristics of strained-Si nMOSFETs using chemical–mechanical-polishing technique;Solid-State Electronics;2009-08
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