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Studies on Electrochemical Characteristics of SiGe in Application to Chemical Mechanical Polishing

  • Published:2018 Issue:5 Volume:7 Page:P213-P220
  • ISSN:2162-8769
  • Container-title:ECS Journal of Solid State Science and Technology
  • language:en
  • Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Yang ShenghuaORCID,Zhang BaoguoORCID,Wang Chenwei,Zhang Wenqian,Liu Yuling,Gao Baohong

Funder

One Hundred Talent Project of Hebei Province of China

Natural Science Fundation of Hebei Province, China

Key Project of Natural Science of Hebei Province Colleges and Universities

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference42 articles.

1. High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation

2. Basim G. B. Karagoz A. Chen L. , Surfactant Mediated Slurry Formulations for Ge CMP Applications. Mrs Proceedings 2013, 1560.

3. Chemical Mechanical Polishing of Ge Using Colloidal Silica Particles and H2O2

4. Ong P. Witters L. Leunissen L. H. A. , CMP of Ge for High Mobility Channels. International Conference on Planarization/CMP Technology, 2010:69–73.

5. Ong P. Kellens K. Chiodarelli N. CMP of Novel Materials, Lake Placid Meeting, 2009.

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