High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation
Author:
Funder
EPSRC
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4825130
Reference32 articles.
1. Ge (100) and (111) N- and P-FETs With High Mobility and Low-$T$ Mobility Characterization
2. Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate
3. Electron mobility in Ge and strained-Si channel ultrathin-body metal-oxide semi conductor field-effect transistors
4. Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
5. Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si
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