Excitation mechanism of Er in Si studied with a free-electron laser-Reference-Cited by-同舟云学术

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Excitation mechanism of Er in Si studied with a free-electron laser

Published:1998-12 Issue:1-4 Volume:80 Page:291-295
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Gregorkiewicz T,Thao D.T.X,Tsimperidis I,Bekman H.H.P.Th,Langerak C.J.G.M,Michel J,Kimerling L.C

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference11 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. Optically active erbium centers in silicon

3. The erbium‐impurity interaction and its effects on the 1.54 μm luminescence of Er3+in crystalline silicon

4. ISOLDE Collaboration;Wahl;Phys. Rev. Lett.,1997

5. The mechanisms of electronic excitation of rare earth impurities in semiconductors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Afterglow effect in photoluminescence of Si:Er;Physical Review B;2002-05-07

2. Tracking recombination processes in Si : Er with a free-electron laser;Journal of Luminescence;2000-05

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