The mechanisms of electronic excitation of rare earth impurities in semiconductors
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/8/i=5/a=018/pdf
Reference23 articles.
1. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
3. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
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