Direct Evidence for Tetrahedral Interstitial Er in Si
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.2069/fulltext
Reference16 articles.
1. Light Emission from Silicon
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
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4. Optically active erbium centers in silicon
5. Erbium point defects in silicon
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