Optically active erbium centers in silicon-Reference-Cited by-同舟云学术

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Optically active erbium centers in silicon

Published:1996-07-15 Issue:4 Volume:54 Page:2532-2547
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Przybylinska H.,Jantsch W.,Suprun-Belevitch Yu.,Stepikhova M.,Palmetshofer L.,Hendorfer G.,Kozanecki A.,Wilson R. J.,Sealy B. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.54.2532/fulltext

Reference35 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

3. Characteristics of rare‐earth element erbium implanted in silicon

4. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

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