Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage-Reference-Cited by-同舟云学术

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Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage

Published:2014-11 Issue: Volume:64 Page:152-157
ISSN:1386-9477
Container-title:Physica E: Low-dimensional Systems and Nanostructures
language:en
Short-container-title:Physica E: Low-dimensional Systems and Nanostructures

Author:

Adak Sarosij,Swain Sanjit Kumar,Singh Avtar,Pardeshi Hemant,Pati Sudhansu Kumar,Sarkar Chandan Kumar

Funder

Department of Science and Technology

Government of India, AICTE

Silicon Institute of Technology

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

2. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

3. Calculations of two dimensional electron gas distributions in AlGaN/GaN material system

4. Simulation and Analysis of High Breakdown Voltage AlGaN/GaN MOSHEMTs with TiO2/Al2O3 Gate Dielectric

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3. PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management;Power Electronic Devices and Components;2023-03

4. CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing;2022 IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON);2022-11-26

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