PECVD SiNx passivation with more than 8 MV/cm breakdown strength for GaN-on-Si wafer stress management

Author:

Moser MatthiasORCID,Pradhan Mamta,Alomari Mohammed,Heuken Michael,Schmitt Thomas,Kallfass Ingmar,Burghartz Joachim N.

Publisher

Elsevier BV

Reference32 articles.

1. Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage;Adak;Physica E: Low-Dimensional Systems and Nanostructures,2014

2. PECVD silicon nitride-based multilayers with optimized mechanical properties;Ahammou,2022

3. The 2018 GaN power electronics roadmap;Amano;Journal of Physics D: Applied Physics,2018

4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures;Ambacher;Journal of Physics: Condensed Matter,2002

5. Mixed Weibull distribution model of DC dielectric breakdowns with dual defect modes;Andersen,2015

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