Calculations of two dimensional electron gas distributions in AlGaN/GaN material system
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference12 articles.
1. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
2. Theoretical study of a GaN-AlGaN high electron mobility transistor including a nonlinear polarization model
3. Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
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2. Study of HfAlO/AlGaN/GaN MOS-HEMT with source field plate structure for improved breakdown voltage;Physica E: Low-dimensional Systems and Nanostructures;2014-11
3. Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction;Chinese Physics B;2014-10
4. An AlGaN/GaN HEMT with enhanced breakdown and a near-zero breakdown voltage temperature coefficient;Chinese Physics B;2013-02
5. A Novel Controllable Hybrid-Anode AlGaN/GaN Field-Effect Rectifier with Low Operation Voltage;Chinese Physics Letters;2012-10
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