Low-resistance Ohmic contact on polarization-doped AlGaN/GaN heterojunction
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/23/10/107101/pdf
Reference30 articles.
1. Relationship between thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes
2. Current deep level transient spectroscopy analysis of AlInN/GaN high electron mobility transistors: Mechanism of gate leakage
3. Near-infrared wavelength intersubband transitions in GaN∕AlN short period superlattices
4. Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
5. Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment
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1. Low resistance Ohmic contacts to graded InGaN;Materials Science in Semiconductor Processing;2023-01
2. A first principles study of Nd doped cubic LaAlO3 perovskite: mBJ+U study;Journal of Magnetism and Magnetic Materials;2016-11
3. Band-gap engineering of La 1− x Nd x AlO 3 ( x = 0, 0.25, 0.50, 0.75, 1) perovskite using density functional theory: A modified Becke Johnson potential study;Chinese Physics B;2016-06
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